ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1. 2 1 d escription the ACE9926B uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 2.5v to 12v. the two devices may be used individually, in parallel or to form a bidirectional blocking switch. features ? v ds (v) = 2 0v ? i d = 6 a (v gs =4.5v) ? r ds(on ) <30 m ( v gs = 4.5 v ) ? r ds(on ) <40 m ( v gs = 2.5 v ) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s 20 v gate - source voltage v gs s 12 v drain current (continuous) * ac t a =25 o c i d 6 a t a =70 o c 5 drain current (pulse) * b i dm 24 a po wer dissipation t a =25 o c p d 2 w t a =70 o c 1.3 operating and storage temperature range t j , t stg - 55 to 150 o c packaging type s op - 8
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 2 ordering i nformation ace 9926 b xx + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250ua 20 v zero gate voltage drain current i dss v ds = 20 v, v gs =0v 1 ua gate leak age current i gss v gs = 12 v, v ds =0v 10 0 na drain - source on - state resistance r ds(on) v gs = 4.5 v, i d = 6 a 21 30 m v gs = 2.5 v, i d = 5.2 a 30 40 gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 0.65 0.78 1 v forward transconductance g fs v ds = 5v, i d = 6 a 1 2 s diode forward voltage v sd v gs =0v, i s d =1.7a 0.8 1.0 v maximum body - diode continuous current i s 1.7 a switching total gate charge q g v ds = 1 0v, v gs = 4. 5v, i d =6 a 6.24 8.11 nc gate - source charge q gs 1.64 2.13 gate - drain charge q gd 1.34 1.74 tur n - on delay time t d(on) v gs = 4.5v, v ds =10v, r l =10 , r gen = 6 10.4 20.8 ns turn - o n rise time t r 4.4 8.8 turn - o ff delay time t d(off) 27.36 54.72 turn - o ff rise time t f 4.16 8.32 dynamic input capacitance c iss v ds = 8 v, v gs =0v f=1mhz 522.3 pf output capacitance c oss 98.48 reverse transfer capacitance c rss 74.69 note: a . the value of r ja is measured with the device mounted on 1*1in fr - 4 board with 2oz copper, in a still a ir environment with t a =25c. the value in any given application depends on the user's specific board design. b . repetitive rating, pulse width limited by junction temperature. c . the current rating is based on the t 10s junction to ambient thermal resista nce rating. fm : sop - 8 pb - free halogen - free
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 3 typical performance characteristics
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 4 typical performance characteristics
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 5 typical performance characteristics
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 6 pack ing information so p - 8 unit: mm
ace 9926b dual n - channel enhancement mode field effect t r ansistor ver 1.2 7 notes ace does not assume any responsibility for use as critical components in life support devices or sys tems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life suppo rt device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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